IXFH80N65X2
$7.93
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IXFH80N65X2 – 650V N-Channel MOSFET – IXYS (Littelfuse) HiPerFET™ Power Transistor
Optimize high-power designs with the IXFH80N65X2 N-Channel MOSFET from IXYS, a Littelfuse company. This Ultra X2 series HiPerFET™ delivers exceptional efficiency and thermal performance for demanding industrial applications. PCX ensures authentic IXYS components with reliable stock and fast shipping.
Key Features
- High Voltage Rating: 650V Drain-Source Voltage (Vdss)
- Robust Current Handling: 80A Continuous Drain Current (Id) at 25°C
- Ultra-Low Resistance: 40mΩ Max Rds(on) @ 40A, 10V
- Optimized Switching: Low Gate Charge (Qg) of 143nC @ 10V
- Wide Temperature Range: Operates from -55°C to +150°C (TJ)
- High-Power Tolerance: 890W Maximum Power Dissipation (TC)
Technical Specifications
This N-Channel silicon MOSFET features TO-247-3 (IXTH) through-hole packaging for secure mounting in high-voltage circuits. Its advanced Metal Oxide technology ensures reliable switching with a gate-source voltage (Vgs) range of ±30V. With an input capacitance (Ciss) of 8245pF @ 25V and a threshold voltage (Vgs(th)) of 5.5V max @ 4mA, it balances efficiency and control in power conversion systems.
Typical Applications
- Industrial motor drives and inverters
- High-efficiency SMPS and UPS systems
- Renewable energy inverters (solar/wind)
- Welding equipment and power supplies
- Electric vehicle charging stations
About IXYS (A Littelfuse Company)
IXYS, now part of Littelfuse, is a global leader in power semiconductors and integrated circuits. For over 35 years, the brand has pioneered high-voltage MOSFETs and power management solutions trusted for industrial reliability. Their HiPerFET™ technology sets industry benchmarks for thermal performance and switching efficiency.
Littelfuse maintains IXYS’s commitment to rigorous quality control and innovation, ensuring components meet stringent automotive and industrial standards. This acquisition strengthens the combined portfolio’s focus on sustainable energy and electrification solutions worldwide.
About Power MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are fundamental switches in modern power electronics. They regulate current flow using voltage at the gate terminal, enabling efficient power conversion with minimal losses. N-Channel variants like the IXFH80N65X2 excel in high-side switching applications due to their electron mobility advantages.
In systems requiring high voltage/current handling—such as motor controllers or inverters—MOSFETs reduce heat generation and energy waste. Their fast switching capabilities improve response times in PWM-controlled circuits, making them indispensable in green energy infrastructure and industrial automation.
Packaging
Available in protective Tube packaging for secure handling during assembly. Contact PCX for bulk or custom packaging requirements.
FAQs
Q: What is the benefit of HiPerFET™ technology?
A: HiPerFET™ reduces switching losses and improves thermal stability, enhancing efficiency in high-frequency power circuits.
Q: Is this MOSFET suitable for automotive applications?
A: While industrial-grade, it can be used in rugged environments. Verify specific AEC-Q qualifications for automotive use cases.
Q: What heatsink is recommended for 890W dissipation?
A: Use forced-air cooling or heatsinks with thermal resistance ≤0.14°C/W. Consult the datasheet for thermal management guidelines.
Q: Can I parallel multiple IXFH80N65X2 MOSFETs?
A: Yes, paralleling is possible with gate resistors to balance current. Ensure matched Vgs(th) tolerances.
Q: Does PCX provide lifecycle status updates?
A: Yes! We track manufacturer EOL notices and offer last-time-buy alerts for active support.
Q: How do MOSFETs compare to IGBTs in inverters?
A: MOSFETs offer faster switching and better efficiency at lower voltages (<600V), while IGBTs excel at higher voltages/heavy loads.
Note: Product image is representational. Refer to datasheet for exact dimensions.
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Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
|---|---|
| Brand | IXYS |
| Mfr | Littelfuse Inc. |
| Series | HiPerFET™, Ultra X2 |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8245 pF @ 25 V |
| Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXFH80 |
| Full Description | IXFH80N65X2 |
