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STD3PK50Z

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STD3PK50Z – 500V P-Channel SuperMESH™ MOSFET – STMicroelectronics

Optimize power efficiency in demanding circuits with the STD3PK50Z P-Channel MOSFET from STMicroelectronics. This high-voltage SuperMESH™ technology device delivers robust switching performance and thermal stability, ideal for compact power management designs. PCX ensures genuine components with rapid shipping and dedicated technical support.

Key Features

  • High Voltage Rating: 500V Drain-to-Source (Vdss)
  • Low On-Resistance: 4Ω max @ 1.4A, 10V (Rds(on))
  • Efficient Switching: Gate charge (Qg) of 20nC @ 10V
  • Wide Temp Range: Operates from -55°C to +150°C (TJ)
  • Surface-Mount Design: DPAK (TO-252) package for automated assembly

Technical Specifications

This P-Channel MOSFET utilizes STMicroelectronics’ SuperMESH™ technology to minimize conduction losses. Features include a continuous drain current (Id) of 2.8A (at Tc), ±30V gate-source voltage tolerance, and low input capacitance (Ciss = 620pF @ 25V). The surface-mount DPAK package (TO-252-3) ensures reliable thermal dissipation up to 70W power dissipation.

Typical Applications

  • Switch-mode power supplies (SMPS)
  • DC-DC converters and voltage regulators
  • Motor control circuits
  • Lighting ballasts and LED drivers
  • Industrial automation systems

About STMicroelectronics

STMicroelectronics is a global semiconductor leader with 40+ years of innovation in power electronics. Their MOSFET technologies set industry standards for efficiency and reliability, serving automotive, industrial, and consumer markets. Rigorous quality control and vertical integration ensure consistent performance across all operating conditions.

STMicroelectronics holds ISO 9001 and IATF 16949 certifications, reflecting their commitment to excellence. Their SuperMESH™ series, including this MOSFET, is renowned for achieving optimal balance between switching speed and thermal management in high-voltage environments.

About Power MOSFETs

Power MOSFETs are essential semiconductor switches controlling current flow in electronic circuits. They enable efficient power conversion with minimal losses, critical for energy-sensitive designs. Unlike bipolar transistors, MOSFETs operate via voltage-controlled gates, simplifying drive circuitry while enabling high-frequency switching.

P-Channel MOSFETs like the STD3PK50Z simplify circuit design in high-side switching applications by allowing direct gate drive from logic-level signals. Their low on-resistance and thermal resilience make them indispensable in power supplies, motor controllers, and energy management systems where reliability is paramount.

Packaging Options

Available in Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® formats for prototyping or volume production. Note: Product marked obsolete by manufacturer – available at PCX while supplies last.

FAQs

Q: Is this MOSFET suitable for 400V industrial power supplies?
A: Yes, its 500V Vdss rating provides safe overhead for 400V systems.

Q: Can I drive this MOSFET with a 5V microcontroller?
A: Requires 10V gate drive for optimal Rds(on). Use a gate driver IC for 5V logic.

Q: What heatsinking is recommended?
A: The DPAK tab requires PCB copper pour or external heatsink for >2A continuous loads.

Q: Why choose P-Channel over N-Channel MOSFETs?
A: P-Channel simplifies high-side switching by eliminating bootstrap circuits.

Q: Is the STD3PK50Z RoHS compliant?
A: Yes, this device meets RoHS environmental standards.

Q: Can PCX provide datasheets?
A: Access the full STD3PK50Z datasheet here (hosted on PCXCo.com).

Product images are representational. Refer to datasheet for exact dimensions.

Secure your obsolete components today – limited stock available! Order from PCX for guaranteed authenticity and priority shipping.

Additional Information

Category

Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs

Brand

STMicroelectronics

Mfr

STMicroelectronics

Series

SuperMESH™

Packaging

Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500 V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

620 pF @ 25 V

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

STD3PK

Full Description

STD3PK50Z