
MT46H256M32L4LE-48 WT:C
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MT46H256M32L4LE-48 WT:C – 8Gbit Mobile LPDDR SDRAM – Micron Technology
This high-density 8Gbit Mobile LPDDR SDRAM from Micron Technology delivers efficient memory performance for power-sensitive embedded systems. Engineered for reliability and low-voltage operation, PCX supplies this IC with guaranteed quality, same-day shipping, and dedicated technical support.
Key Features
Memory Size: 8Gbit (256M x 32 organization)
Technology: Mobile LPDDR SDRAM
Speed: 208 MHz clock frequency with 5ns access time
Voltage: Ultra-low 1.7V–1.95V operation
Package: 168-TFBGA (12x12mm) surface-mount design
Temperature Range: Industrial-grade -25°C to 85°C
Technical Details
Organized as 256M x 32-bit, this volatile DRAM features a parallel interface with 14.4ns write cycle time. The 168-VFBGA package provides compact integration for space-constrained designs while maintaining robust signal integrity. Note: This product has reached obsolete status but remains available through PCX for legacy system support.
Typical Applications
Portable medical monitoring devices
Automotive telematics and infotainment systems
Industrial automation controllers
Mobile computing platforms
Embedded IoT gateways
About Micron Technology
Micron Technology Inc. is a global leader in advanced memory solutions, with over 40 years of innovation in semiconductor manufacturing. Their expertise in DRAM and NAND technologies drives industry standards for performance and power efficiency across computing, networking, and mobile applications.
Micron’s rigorous quality control and cutting-edge fabrication processes ensure reliable operation in mission-critical environments. As a trusted partner for Fortune 500 companies and engineering teams worldwide, Micron consistently delivers memory solutions that push technological boundaries while maintaining backward compatibility.
About Mobile LPDDR SDRAM
Mobile Low Power Double Data Rate Synchronous Dynamic RAM (LPDDR SDRAM) is engineered specifically for battery-operated devices requiring minimal energy consumption. This memory type features advanced power-down modes and burst-oriented data transfer that significantly reduce active and idle power
Additional Information
| Category | Integrated Circuits (ICs)MemoryMemory |
|---|---|
| Brand | Micron |
| Mfr | Micron Technology Inc. |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM – Mobile LPDDR |
| Memory Size | 8Gbit |
| Memory Organization | 256M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 208 MHz |
| Write Cycle Time - Word, Page | 14.4ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 168-VFBGA |
| Supplier Device Package | 168-TFBGA (12×12) |
| Base Product Number | MT46H256M32 |
| Full Description | MT46H256M32L4LE-48 WT:C |



