CGHV96100F2
$1,269.39
GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
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CGHV96100F2 – 100W GaN HEMT RF Power Transistor – MACOM
The MACOM CGHV96100F2 is a high-performance Gallium Nitride (GaN) HEMT RF transistor engineered for demanding power amplification in the X-band frequency range. Operating at 7.9-9.6GHz with 131W output power and 10.2dB gain, this component delivers exceptional efficiency and thermal stability for critical communication and radar systems. PCX guarantees authentic MACOM components with reliable stock and expedited shipping.
Key Features
Frequency Range: 7.9GHz ~ 9.6GHz
Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs |
|---|---|
| Brand | MACOM |
| Manufacturer | MACOM Technology Solutions |
| Series | GaN |
| Packaging | Tray |
| Part Status | Active |
| Technology | HEMT |
| Frequency | 7.9GHz ~ 9.6GHz |
| Gain | 10.2dB |
| Voltage - Test | 40 V |
| Current Rating (Amps) | 12A |
| Current - Test | 1 A |
| Power - Output | 131W |
| Voltage - Rated | 100 V |
| Package / Case | 440210 |
| Supplier Device Package | 440210 |
| Base Product Number | CGHV96100 |
| Full Description | CGHV96100F2 |
