CG2H40120P – 120W GaN HEMT RF Power Transistor – MACOM Technology

Experience exceptional RF power amplification with the CG2H40120P GaN HEMT transistor from MACOM Technology. Designed for demanding high-frequency applications, this surface-mount device delivers 120W output power at 2.5GHz with industry-leading efficiency and thermal stability. PCX ensures genuine MACOM components with reliable stock and rapid shipping.

Key Features

• 120W RF Output Power at 2.5GHz frequency
• 20dB Power Gain for superior signal amplification
• GaN HEMT Technology enabling high efficiency & power density
• 120V Rated Voltage with 28V test voltage capability
• Surface-Mount Package (440206) for compact PCB integration
• Active Status for long-term design support

Technical Specifications

This RF power transistor features a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) architecture optimized for 2.5GHz operation. Tested at 1A current and 28V voltage, it achieves 20dB gain in a robust surface-mount package (440206). The device operates under a maximum 120V rating and is supplied in protective trays.

Typical Applications

• Commercial/Defense Radar Systems
• 5G Base Station Power Amplifiers
• Satellite Communication Equipment
• Industrial RF Heating Systems
• Avionics & Aerospace Electronics

About MACOM Technology

MACOM Technology Solutions is a global leader in semiconductor innovation, specializing in RF, microwave, and millimeter-wave solutions. With over 60 years of industry expertise, MACOM consistently delivers high-reliability components for critical communications infrastructure, aerospace, and defense applications.

Renowned for pushing performance boundaries with GaN technology, MACOM maintains rigorous quality certifications and provides extensive technical support. Their components are trusted by Fortune 500 companies for mission-critical systems requiring uncompromising performance and longevity.

About GaN HEMT RF Transistors

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) represent the pinnacle of RF power device technology, offering significant advantages over traditional silicon-based solutions. These transistors enable higher power density, improved thermal conductivity, and superior efficiency at high frequencies – critical for modern wireless infrastructure.

In applications like 5G networks and radar systems, GaN HEMTs reduce system size while increasing output power and bandwidth. Their ability to operate at higher voltages and temperatures makes them essential for next-generation communication platforms where reliability and performance are non-negotiable.

Packaging Information

Available in protective industrial trays to ensure damage-free transit. Contact PCX for reel packaging options and custom quantity requirements.

FAQs

Question: What thermal management is required for this GaN HEMT?

Answer: Proper heatsinking is essential. Refer to MACOM’s datasheet for thermal resistance specs and PCB layout recommendations.

Question: Is this transistor suitable for pulsed radar applications?

Answer: Yes, GaN HEMTs like the CG2H40120P are ideal for pulsed RF systems due to high peak power handling.

Question: What biasing configuration does this device require?

Answer: Requires positive drain voltage and negative gate voltage. Consult the datasheet for specific bias sequencing requirements.

Question: Can I parallel multiple devices for higher power?

Answer: Yes, but impedance matching and thermal balancing are critical. MACOM provides application notes for combining techniques.

Question: Does PCX provide samples for evaluation?

Answer: Contact our support team to discuss sampling options for qualified designs.

Question: What’s the lead time for bulk orders?

Answer: PCX maintains stock for immediate shipment. Large quantities ship within 3 business days.

Product image is representational. Refer to datasheet for exact dimensions and specifications.
Download Full Datasheet

Ready to Integrate High-Performance RF Amplification?

Boost your design’s capabilities with genuine MACOM components. Order CG2H40120P GaN HEMT transistors today for guaranteed next-business-day shipping from PCX!