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MMBFJ177LT1G – Transistor – onsemi

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MMBFJ177LT1G – P-Channel JFET Transistor – onsemi

Optimize your circuit designs with the MMBFJ177LT1G P-Channel JFET transistor from onsemi. This surface-mount component delivers reliable signal switching and amplification in compact applications, featuring low input capacitance and stable performance across extreme temperatures. Ideal for space-constrained designs requiring precision control.

Key Features

  • FET Type: P-Channel JFET
  • Breakdown Voltage: 30V (V(BR)GSS)
  • Drain Current: 1.5mA @ 15V (VGS=0)
  • Low Cutoff Voltage: 800mV @ 10nA
  • Input Capacitance: 11pF max @ 10V
  • Power Handling: 225mW max
  • Wide Temperature Range: -55°C to +150°C

Technical Details

This JFET transistor utilizes a P-Channel configuration with an RDS(On) resistance of 300 Ohms, ensuring efficient signal modulation. Housed in a SOT-23-3 (TO-236) surface-mount package, it supports automated assembly processes. The device operates reliably across industrial and automotive temperature extremes, with robust ESD protection inherent to JFET architecture.

Typical Applications

  • Analog signal switching circuits
  • High-impedance sensor interfaces
  • Low-noise amplification stages
  • Battery-powered portable devices
  • Voltage-controlled resistors

About onsemi

onsemi (ON Semiconductor) is a global leader in power management and sensor technologies, renowned for innovative semiconductor solutions. With over 25 years of industry expertise, they drive advancements in automotive, industrial automation, and IoT applications through rigorous quality standards and cutting-edge R&D.

The company’s commitment to reliability is demonstrated by ISO/TS 16949 certification and AEC-Q101 qualified components. onsemi’s vertically integrated manufacturing ensures consistent performance, making their transistors a trusted choice for critical electronic systems worldwide.

About JFET Transistors

Junction Field-Effect Transistors (JFETs) are voltage-controlled devices essential for high-impedance, low-noise signal processing. Unlike MOSFETs, JFETs operate without an insulating oxide layer, providing inherent electrostatic discharge (ESD) robustness and simpler biasing requirements. Their unipolar conduction mechanism minimizes current noise, making them ideal for audio and sensor applications.

P-Channel JFETs like the MMBFJ177LT1G are particularly valuable for switching negative voltages or current sinking in analog circuits. Their high input impedance preserves signal integrity in measurement systems, while temperature stability ensures consistent performance in harsh environments.

Packaging Options

Available in industry-standard formats for flexible production scaling:

  • Tape & Reel (TR) for automated assembly
  • Cut Tape (CT) for prototyping
  • Digi-Reel® for custom quantities

Frequently Asked Questions

Q: What is the main advantage of this P-Channel JFET vs. N-Channel?
A: P-Channel variants simplify circuit design when switching negative voltages or grounding loads, reducing component count in certain configurations.

Q: Can I use this transistor for audio applications?
A: Yes, its low input capacitance (11pF) and minimal noise characteristics make it suitable for high-fidelity audio preamplifiers.

Q: Is this JFET compatible with 3.3V systems?
A: Absolutely. With a cutoff voltage of 800mV, it operates efficiently in low-voltage circuits including 3.3V logic.

Q: What protection features does it include?
A: JFETs inherently resist ESD damage due to their conductive channel structure, though external protection is recommended for >30V environments.

Q: How does temperature affect performance?
A: The junction-rated operating range (-55°C to +150°C) ensures stable operation in industrial settings, with Idss typically decreasing at higher temperatures.

Q: Are samples available for testing?
A: PCX offers sample quantities through Cut Tape packaging – contact our support team for requests.

Note: Product images are representational. Refer to the onsemi datasheet for exact specifications.

Order Today for Fast Delivery!

Leverage PCX’s industry-leading supply chain – order the MMBFJ177LT1G JFET transistor now for guaranteed authentic onsemi components and same-day shipping!

Additional Information

Category

Discrete Semiconductor ProductsTransistorsJFETs

Brand

onsemi

Manufacturer

onsemi

Packaging

Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

Part Status

Active

FET Type

P-Channel

Voltage - Breakdown (V(BR)GSS)

30 V

Current - Drain (Idss) @ Vds (Vgs=0)

1.5 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id

800 mV @ 10 nA

Input Capacitance (Ciss) (Max) @ Vds

11pF @ 10V (VGS)

Resistance - RDS(On)

300 Ohms

Power - Max

225 mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

Base Product Number

MMBFJ177

Full Description

MMBFJ177LT1G