
IRF4905PBF – Transistor – Infineon Technologies
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IRF4905PBF – 55V P-Channel HEXFET® MOSFET – Infineon Technologies
Optimize your power management designs with the Infineon IRF4905PBF P-Channel MOSFET from PCX. Engineered for high-efficiency switching, this robust transistor delivers 74A continuous current with ultra-low 20mΩ on-resistance, minimizing power losses in demanding applications. Ideal for DC-DC converters, motor drivers, and battery systems, it features a rugged TO-220AB package for reliable thermal performance and easy integration.
Key Features
- High Power Handling: 74A continuous drain current (Tc) @ 25°C
- Ultra-Low Resistance: 20mΩ max Rds(on) @ 38A, 10V gate drive
- Voltage Rating: 55V drain-to-source (Vdss)
- Efficient Switching: 180nC max gate charge (Qg) @ 10V
- Wide Temperature Range: Operates from -55°C to 175°C (TJ)
- Rugged Construction: Through-hole TO-220AB package
Technical Specifications
- FET Type: P-Channel MOSFET
- Drive Voltage: 10V (max Rds on)
- Gate Threshold: 4V max @ 250µA (Vgs(th))
- Input Capacitance: 3400pF max @ 25V (Ciss)
- Power Dissipation: 200W max (Tc)
- Package: TO-220-3 (Supplier Device: TO-220AB)
Typical Applications
- Switch-mode power supplies (SMPS) and DC-DC converters
- Motor control circuits in industrial automation
- Battery management and protection systems
- Load switching in automotive electronics
- UPS and inverter power stages
About Infineon Technologies
Infineon Technologies is a global semiconductor leader renowned for pioneering power efficiency solutions. With over four decades of innovation, Infineon’s HEXFET® MOSFETs set industry benchmarks for reliability and performance in high-current switching applications. Their rigorous quality control and vertical integration ensure consistent product characteristics critical for mission-critical designs.
The company’s expertise in power management spans automotive, industrial, and consumer markets, backed by extensive R&D investment. Infineon’s commitment to technological advancement makes them a trusted partner for engineers worldwide, delivering components that exceed thermal and electrical stress requirements under extreme operating conditions.
About MOSFET Transistors
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are fundamental semiconductor devices used for switching and amplifying electronic signals. As voltage-controlled components, they offer high input impedance and fast switching speeds with minimal drive power. P-Channel variants like the IRF4905PBF are particularly valuable in high-side switching configurations where source voltage exceeds supply rails.
These transistors form the backbone of modern power electronics due to their scalability, efficiency, and thermal stability. From energy conversion in power supplies to precision motor control, MOSFETs enable compact, energy-efficient designs across industries while reducing heat dissipation and system costs compared to traditional alternatives.
Packaging
Available in protective tube packaging for secure handling and automated assembly. Contact PCX for bulk or reel customization options.
FAQs
Q: What heatsink is recommended for the IRF4905PBF at full load?
A: Use a heatsink maintaining Tj ≤ 175°C. Thermal resistance depends on airflow; refer to the datasheet for θJA calculations.
Q: Can this MOSFET handle 12V automotive applications?
A: Yes, its 55V Vdss rating exceeds 12V system surges, and the operating temperature range suits automotive environments.
Q: How does gate charge affect switching performance?
A: Lower Qg (180nC here) enables faster switching frequencies and reduces driver losses, critical for high-efficiency designs.
Q: Is this suitable for PWM motor control?
A: Absolutely. The low Rds(on) and high current rating make it ideal for PWM-driven motor drivers up to 74A.
Q: What distinguishes HEXFET® technology?
A: Infineon’s proprietary HEXFET® design delivers ultra-low on-resistance and superior thermal performance via optimized cell structures.
Q: Are SPICE models available?
A: Yes, Infineon provides simulation models. Download the datasheet from PCXCo.com for links.
Order today for fast delivery! PCX guarantees genuine Infineon components, shipped same-day with dedicated technical support.
Note: Product images are representational. Refer to datasheets at PCXCo.com for exact specifications.
Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
|---|---|
| Brand | Infineon Technologies |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF4905 |
| Full Description | IRF4905PBF |


