
FQA70N10 – Transistor – onsemi
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FQA70N10 – 100V N-Channel Power MOSFET – onsemi
The FQA70N10 from onsemi delivers robust power management in a single MOSFET package. Engineered for high-efficiency switching, this N-Channel transistor features an exceptional 70A continuous drain current rating and ultra-low 23mOhm on-resistance. Ideal for demanding industrial applications, it ensures thermal stability across extreme temperatures while minimizing power losses.
Key Features
Voltage & Current: 100V Drain-Source Voltage | 70A Continuous Drain Current (Tc)
Efficiency: Ultra-Low 23mOhm On-Resistance (max) @ 35A, 10V
Thermal Performance: 214W Max Power Dissipation | -55°C to 175°C Operating Range
Drive Characteristics: 10V Drive Voltage | 110nC Max Gate Charge
Robust Construction: Through-Hole TO-3PN Package | ±25V Max Vgs
Technical Details
This QFET® series MOSFET utilizes advanced N-Channel technology with optimized input capacitance (3300pF max @25V) for fast switching. The TO-3P-3 package ensures reliable thermal transfer, while a 4V max gate threshold voltage enables precise control. Designed for high-reliability circuits, it maintains stable performance under heavy loads.
Typical Applications
Industrial motor drives and controllers
Switching power supplies (SMPS) and converters
UPS systems and power inverters
Automotive electronic control units (ECUs)
High-current DC-DC regulation circuits
About onsemi
onsemi is a global leader in power management technologies, renowned for innovative semiconductor solutions across automotive, industrial, and computing sectors. With over 50 years of industry expertise, they consistently deliver components that meet rigorous quality standards and evolving market demands.
The company’s commitment to reliability is demonstrated through extensive testing protocols and ISO-certified manufacturing. onsemi’s QFET® series, including the FQA70N10, exemplifies their focus on energy-efficient designs that reduce system losses while maximizing thermal performance in critical applications.
About Power MOSFETs
Power MOSFETs are fundamental switching devices that control high-current loads with minimal drive power. Their metal-oxide-semiconductor structure enables rapid switching speeds and thermal stability, making them indispensable in modern power electronics where efficiency and heat management are paramount.
In applications like motor drives and power supplies, N-Channel MOSFETs like the FQA70N10 offer superior current-handling capabilities versus traditional transistors. Selecting the right MOSFET involves balancing voltage ratings, on-resistance, and thermal characteristics to optimize system reliability and longevity.
Packaging
Available in protective Tube packaging for secure handling and automated assembly. Contact PCX for bulk order options.
Frequently Asked Questions
Question: What heatsink is recommended for the FQA70N10?
Answer: Use a heatsink rated for ≥214W dissipation with thermal interface material. TO-3PN-compatible designs ensure optimal thermal transfer.
Question: Can this MOSFET handle automotive voltage spikes?
Answer: Yes, the 100V Vdss rating provides headroom for typical 12V/24V system transients when properly fused.
Question: Is gate driver IC required for operation?
Answer: A driver is recommended due to the 110nC gate charge – ensure ≥2A peak drive current for efficient switching.
Question: What’s the difference between QFET® and standard MOSFETs?
Answer: onsemi’s QFET® technology optimizes cell density for lower Rds(on) and reduced gate charge, improving efficiency.
Question: Can I parallel multiple FQA70N10s for higher current?
Answer: Yes, with matched gate resistors and thermal coupling. Derate total current by 15-20% for balance.
Question: Where can I find the full datasheet?
Answer: Download the FQA70N10 datasheet directly from PCXCo.com for detailed specifications and application notes.
Note
Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
|---|---|
| Brand | onsemi |
| Mfr | onsemi |
| Series | QFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | FQA70 |
| Full Description | FQA70N10 |

