EDB8164B4PT-1DIT-F-R

EDB8164B4PT-1DIT-F-R – DDR3L SDRAM Memory IC – Micron Technology
Optimize your embedded systems with the EDB8164B4PT-1DIT-F-R DDR3L SDRAM from Micron Technology. This high-performance memory IC delivers efficient data processing with reduced power consumption, making it ideal for demanding applications. PCX guarantees authentic Micron components with reliable stock and expedited shipping.

Key Features

DDR3L SDRAM technology for balanced speed and power efficiency
Low-voltage operation (typical 1.35V) for reduced energy consumption
High-speed data transfer capabilities
Robust signal integrity for stable performance
Industrial-grade temperature tolerance

Technical Details
This synchronous DRAM features a double-data-rate interface for optimized bandwidth utilization. Organized for efficient memory access, it supports standard DDR3L protocols and timing. Designed for extended operational reliability across industrial temperature ranges (-40°C to +85°C), ensuring stability in harsh environments. Interface compatibility includes standard JEDEC configurations.

Typical Applications

Industrial automation controllers
Embedded computing systems
Networking and communication equipment
Medical diagnostic devices
IoT edge devices

About Micron Technology
Micron Technology stands as a global leader in advanced memory and storage solutions, driving innovation across the semiconductor industry for over 40 years. Their cutting-edge R&D and vertically integrated manufacturing ensure consistent quality and performance benchmarks in every component, from consumer electronics to mission-critical infrastructure.
Renowned for rigorous testing protocols and long-term product lifecycle support, Micron maintains one of the industry’s highest reliability ratings. Their commitment to technological advancement makes Micron memory ICs the preferred choice for engineers designing next-generation systems requiring uncompromising stability and efficiency.

About DDR3L SDRAM
DDR3L SDRAM (Double Data Rate 3 Low Voltage Synchronous Dynamic Random-Access Memory) represents a critical evolution in volatile memory technology, offering 20% lower power consumption versus standard DDR3 modules while