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DMG1029SV-7 – Transistor – Diodes

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MOSFETs 60V Comp Pair ENH 1.7 Ohm 10V 500mA

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DMG1029SV-7 – Dual N/P-Channel MOSFET Array 60V 500mA – Diodes Incorporated

Optimize your compact designs with the DMG1029SV-7 MOSFET array from Diodes Incorporated. This surface-mount dual-channel MOSFET delivers efficient power switching for space-constrained applications, featuring logic-level gate control and low on-resistance. PCX ensures genuine Diodes components with same-day shipping and dedicated technical support.

Key Features

  • Configuration: Integrated N and P-Channel MOSFETs
  • Voltage Rating: 60V Drain-to-Source (Vdss)
  • Current Handling: 500mA (N-Ch) / 360mA (P-Ch) continuous drain current @25°C
  • Low Rds(on): 1.7Ω max @ 500mA, 10V (N-Channel)
  • Logic-Level Gate: Max Vgs(th) 2.5V @ 250µA
  • Fast Switching: Low gate charge (Qg: 0.3nC max @ 4.5V)
  • Temperature Range: -55°C to +150°C (TJ)

Technical Specifications

This MOSFET array integrates complementary N and P-channel transistors in an ultra-compact SOT-563 (SOT-666) surface-mount package. With input capacitance (Ciss) of 30pF max @ 25V, it enables high-efficiency switching. The logic-level compatible gate requires minimal drive voltage, simplifying interface with microcontrollers. Maximum power dissipation is 450mW.

Typical Applications

  • Load switching in portable electronics
  • Power management circuits
  • Battery protection systems
  • Motor drive modules
  • Signal routing in IoT devices

About Diodes Incorporated

Diodes Incorporated is a global leader in semiconductor solutions, renowned for high-quality discrete components and analog ICs. With over 50 years of industry experience, they maintain rigorous quality standards certified to IATF 16949, ensuring reliability for automotive, industrial, and consumer applications.

The company’s innovation in power management and efficiency has positioned them as a preferred supplier for energy-sensitive designs. Diodes’ continuous investment in wafer fabrication and testing capabilities guarantees consistent performance across production batches, making their components ideal for mission-critical implementations.

About MOSFET Arrays

MOSFET arrays integrate multiple transistors in a single package to save board space and simplify circuit design. These components are essential for power switching applications where synchronized control of complementary channels (N and P-type) is required. Their metal-oxide semiconductor structure provides high input impedance and fast switching speeds.

In modern electronics, MOSFET arrays enable compact power management solutions in devices from smartphones to industrial controllers. The dual-channel configuration reduces component count while improving thermal performance and signal integrity. Logic-level variants like the DMG1029SV-7 directly interface with low-voltage processors, eliminating need for driver stages.

Packaging Options

Available in industry-standard formats: Tape & Reel (TR), Cut Tape (CT), and Digi-Reel®. Specify packaging preference at checkout.

FAQs

Q: Is this MOSFET array suitable for 3.3V microcontroller interfaces?
A: Yes, its logic-level gate (Vgs(th) max 2.5V) operates efficiently at 3.3V.

Q: What’s the difference between N and P-channel ratings?
A: The N-channel handles 500mA continuous current, while the P-channel supports 360mA – refer to datasheet for derating curves.

Q: Can I parallel channels for higher current?
A: Not recommended due to potential current imbalance; use dedicated high-current MOSFETs instead.

Q: Does PCX provide datasheets?
A: Yes, download the full DMG1029SV-7 datasheet from our product page [link to datasheet on PCXCo.com].

Q: What’s the thermal performance in SOT-563 package?
A: The 450mW power limit requires proper PCB heatsinking; thermal vias under the pad are recommended.

Q: Are these RoHS compliant?
A: All Diodes Incorporated components meet RoHS 3 standards.

Product images are representational; refer to datasheet for exact dimensions.

Ready to Ship

Streamline your BOM with this space-saving dual MOSFET solution! Order DMG1029SV-7 from PCX today for guaranteed genuine components and priority dispatch. Contact our support team for volume pricing and design assistance.

Additional Information

Category

Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays

Brand

Diodes

Manufacturer

Diodes Incorporated

Packaging

Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

Part Status

Active

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA, 360mA

Rds On (Max) @ Id, Vgs

1.7Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V, 25pF @ 25V

Power - Max

450mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

Base Product Number

DMG1029

Full Description

DMG1029SV-7