CG2H40010F

CG2H40010F – GaN HEMT RF Transistor, 8GHz, 120V – MACOM
The CG2H40010F from MACOM is a high-performance Gallium Nitride (GaN) HEMT RF transistor engineered for demanding RF amplification tasks. Optimized for efficiency and power in high-frequency applications, this component delivers 16.5dB gain at 8GHz with robust 120V voltage handling. PCX supplies this active-status device with guaranteed authenticity and rapid shipping.

Key Features

Technology: GaN HEMT for superior power density
Frequency: 8GHz operational range
Gain: 16.5dB typical performance
Voltage Rated: 120V maximum
Test Conditions: 28V @ 100mA
Mounting: Chassis mount for thermal management
Package: 440166 case

Technical Details
This RF FET utilizes High Electron Mobility Transistor (HEMT) architecture with GaN technology, enabling higher breakdown voltages and thermal conductivity than silicon-based alternatives. The chassis-mount 440166 package ensures optimal heat dissipation in high-power scenarios. As an active-series component from MACOM’s GaN portfolio, it maintains consistent performance across industrial operating environments.

Typical Applications

Radar and defense systems
5G base station amplifiers