BFR360FH6327 – Electronic Component – Infineon Technologies

RF Bipolar Transistors RF BIP TRANSISTOR

BFR360FH6327 – NPN RF Transistor, 6.5GHz, SOT-363 – Infineon Technologies
Optimize high-frequency designs with Infineon’s BFR360FH6327 RF transistor. This high-performance NPN bipolar transistor delivers exceptional gain and low noise in compact SOT-363 packaging, ideal for demanding wireless applications. PCX guarantees authentic Infineon components with same-day shipping and technical support.

Key Features

Type: NPN RF Bipolar Transistor
Frequency: Up to 6.5GHz transition frequency
Current: 700mA continuous collector current
Voltage: 5V collector-emitter (VCEO)
Noise Figure: Ultra-low 1.2dB typical
Package: Space-saving SOT-363 (SC-88)

Technical Specifications

Organization: Single-device configuration
Interface: 3-pin surface-mount design
Power Dissipation: 300mW
Temperature Range: -55°C to +150°C operating junction temperature
Gain: High linearity gain performance

Typical Applications

RF amplifiers in 5G/WiFi/Bluetooth systems
Low-noise amplifier (LNA) stages
Wireless infrastructure equipment
Automotive radar modules
IoT communication devices

About Infineon Technologies
Infineon Technologies stands at the forefront of semiconductor innovation, with over two decades of expertise in power management and RF solutions. Their components are renowned for rigorous quality standards, consistently exceeding industry reliability benchmarks across automotive, industrial, and communication sectors.
As a global technology leader, Infineon holds ISO/TS 16949 certification for automotive-grade components and invests heavily in R&D. Their RF transistor portfolio, including the BFR series, delivers cutting-edge performance for next-generation wireless systems, making them the preferred choice for critical applications worldwide.

About RF Transistors
RF transistors are fundamental building blocks in high-frequency circuits, amplifying signals while maintaining signal integrity. Their performance directly impacts critical parameters like gain, noise figure, and linearity in wireless systems. Selecting the right RF transistor is essential for optimizing bandwidth efficiency and minimizing interference.
Modern RF transistors like Infineon’s BFR series enable compact, energy-efficient designs for mobile and IoT devices. They provide the necessary speed and stability for GHz-range applications where traditional transistors fail, making them indispensable in telecommunications, radar, and satellite systems demanding uncompromised signal clarity.

Packaging Options
Available in industry-standard Tape & Reel packaging for automated assembly. Contact PCX for reel quantities and custom packaging solutions.

Frequently Asked Questions
Q: What is the typical gain of this RF transistor?
A: The BFR360FH6327 delivers approximately 15dB gain at 1.8GHz under typical operating conditions.

Q: Is this suitable for battery-powered devices?
A: Yes, its low operating voltage (down to 3V) and efficient performance make it ideal for portable electronics.

Q: Does PCX provide datasheets?
A: Absolutely. Download the full Infineon BFR360FH6327 datasheet from our resources section.

Q: What’s the difference between NPN and PNP RF transistors?
A: NPN types (like this device) use electrons as primary carriers, typically offering higher frequency response than hole-driven PNP alternatives.

Q: Can I use this for 6GHz WiFi applications?
A: Yes, with its 6.5GHz fT, it’s well-suited for WiFi 6E/7 front-end modules.

Q: Are these RoHS compliant?
A: All Infineon components shipped by PCX meet current RoHS 3 standards.

*Product images are representational only. Specifications subject to manufacturer documentation.

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