What is the AP95T07BGP?

The AP95T07BGP is an N-channel enhancement-mode power MOSFET from APEC (Advanced Power Electronics Corp.) rated at 75V with a continuous drain current of 80A and a low on-resistance of 5 mu03a9 (max). It is supplied in a through-hole TO-220 package.

Who manufactures the AP95T07BGP?

It is manufactured by Advanced Power Electronics Corp. (APEC). Note that APEC here refers to Advanced Power Electronics Corp. and should not be confused with Anpec Electronics, a separate company.

What package does the AP95T07BGP come in?

The AP95T07BGP is supplied in a TO-220 through-hole package. Per the APEC datasheet, the TO-220 variant of the AP95T07 series carries the GP package code.

What are the key ratings of the AP95T07BGP?

Confirmed datasheet ratings for the AP95T07 TO-220 series are: BVDSS = 75V, RDS(on) = 5 mu03a9 max (at VGS=10V, ID=60A), continuous ID = 80A at TC=25u00b0C, pulsed IDM = 320A, VGS = u00b120V, PD = 300W, total gate charge Qg = 85nC typ, and operating junction temperature of -55u00b0C to +175u00b0C.

What applications is the AP95T07BGP suited for?

It is designed for low-voltage, high-current power conversion such as DC/DC converters, motor control, load switching, power management, and battery charging in commercial and industrial equipment.

Is the AP95T07BGP available to order?

The AP95T07BGP is a hard-to-find part with limited authorized-distributor availability. Pacific Component Xchange can source it on a request-for-quote (RFQ) basis. Contact us for current availability, pricing, and lead time.

AP95T07BGP – N-Channel Power MOSFET – APEC (Advanced Power Electronics Corp.)

The AP95T07BGP is a 75V, 80A N-channel enhancement-mode power MOSFET from APEC (Advanced Power Electronics Corp.) in a through-hole TO-220 package, featuring low 5 mΩ on-resistance and fast switching.

Brand:APEC (Advanced Power Electronics Corp.)

SKU: AP95T07BGP Categories: Electronic Parts, RFQ

Please contact us or add to quote for current pricing and availability.

The AP95T07BGP from APEC (Advanced Power Electronics Corp.) is an N-channel enhancement-mode power MOSFET designed for high-current, low-voltage power conversion. Built on Advanced Power’s silicon process technology, it delivers low on-resistance and fast switching in the popular through-hole TO-220 package, making it well suited for cost-sensitive commercial and industrial designs. This RoHS-compliant variant is part of the broader AP95T07 family.

Key Features

N-Channel Enhancement Mode Power MOSFET
Drain-Source Breakdown Voltage (BV_DSS): 75 V
Static Drain-Source On-Resistance R_DS(on): 5 mΩ max (V_GS=10 V, I_D=60 A)
Continuous Drain Current I_D: 80 A (T_C=25°C, V_GS=10 V)
Pulsed Drain Current I_DM: 320 A
Gate-Source Voltage V_GS: ±20 V
Gate Threshold Voltage V_GS(th): 2–4 V
Total Power Dissipation P_D: 300 W (T_C=25°C)
Total Gate Charge Q_g: 85 nC typ (135 nC max)
Operating Junction Temperature: -55°C to +175°C
RoHS compliant
Package: TO-220

Applications

DC/DC converters and power supplies
Motor control and drives
Load switching and power management
Battery management and charging circuits
Industrial and commercial power conversion

Why Source AP95T07BGP from Pacific Component Xchange

The AP95T07BGP is a hard-to-find part with little or no authorized-distributor stock. Pacific Component Xchange specializes in sourcing scarce, obsolete, and end-of-life power-management ICs and discrete semiconductors for engineers and procurement teams who cannot find inventory through traditional channels. Every order is backed by our authenticity and quality-assurance program to guard against counterfeit components, with global shipping to keep your production lines and repair operations running. Request a quote (RFQ) for AP95T07BGP today and our sourcing specialists will respond with availability, pricing, and lead time.

Additional Information

Manufacturer	Advanced Power Electronics Corp. (APEC)
Component Type	N-Channel Enhancement Mode Power MOSFET
Drain-Source Voltage (BVDSS)	75 V
RDS(on)	5 mΩ max (VGS=10V, ID=60A)
Continuous Drain Current (ID)	80 A (TC=25°C)
Pulsed Drain Current (IDM)	320 A
Gate-Source Voltage (VGS)	±20 V
Gate Threshold Voltage (VGS(th))	2–4 V
Total Power Dissipation (PD)	300 W (TC=25°C)
Total Gate Charge (Qg)	85 nC typ (135 nC max)
Operating Junction Temperature	-55°C to +175°C
Package	TO-220
Part Status	Unknown / RFQ
Availability	Available