
AP65SL190AP – N-Channel Super Junction Power MOSFET – APEC
The AP65SL190AP is a 650V N-channel super junction power MOSFET from Advanced Power Electronics (APEC), featuring 0.19Ω on-resistance and 20A continuous drain current in a TO-220 package. Available for RFQ at Pacific Component Xchange.
The AP65SL190AP from Advanced Power Electronics Corp. (APEC) is an N-channel enhancement-mode super junction power MOSFET rated for 650V drain-source voltage. Built on APEC’s super junction silicon process, it combines a low 0.19Ω on-state resistance with fast switching performance, making it well suited to high-voltage offline power conversion. The “AP” suffix designates the standard TO-220 through-hole package.
Key Features
- N-channel super junction (SJ) power MOSFET technology
- Drain-source voltage (BVDSS): 650V
- On-state resistance RDS(on): 0.19Ω (190mΩ)
- Continuous drain current (ID): 20A
- Maximum gate-source voltage (VGS): ±20V
- Fast switching characteristics for reduced switching losses
- Maximum operating junction temperature: 150°C
- RoHS compliant and halogen-free
- TO-220 through-hole package
Applications
- Switch-mode power supplies (SMPS)
- Power factor correction (PFC) stages
- AC-DC adapters and offline converters
- LED and fluorescent/HID lighting ballasts
- Server and telecom power supplies
- Industrial high-voltage switching
Why Source AP65SL190AP from Pacific Component Xchange
The AP65SL190AP is a hard-to-find part with little to no authorized-distributor stock. Pacific Component Xchange specializes in sourcing scarce, end-of-life, and allocation-constrained power-management and discrete semiconductors like this APEC super junction MOSFET. Our team works global supply channels to locate genuine inventory, with authenticity verification and worldwide shipping. Because this is a request-for-quote item, pricing and lead time are confirmed at the time of inquiry. Submit an RFQ today and our sourcing specialists will respond with current availability, pricing, and delivery options for the AP65SL190AP.
Additional Information
| Manufacturer | Advanced Power Electronics Corp. (APEC) |
|---|---|
| Component Type | N-Channel Super Junction Power MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (BVDSS) | 650 V |
| On-Resistance RDS(on) | 0.19 Ohm (190 mOhm) |
| Continuous Drain Current (ID) | 20 A |
| Gate-Source Voltage (VGS) Max | +/-20 V |
| Max Junction Temperature | 150 C |
| Package | TO-220 |
| Part Status | Active |
| Availability | Available |

