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AP65PN1R4S – N-Channel Power MOSFET – APEC

The AP65PN1R4S is a 650V, 7A N-channel enhancement mode power MOSFET from Advanced Power Electronics (APEC / A-POWER), featuring a maximum RDS(on) of 1.45 Ω and fast switching for off-line and high-voltage switching power supplies.

Brand:APEC
SKU: AP65PN1R4S Categories: ,
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The AP65PN1R4S is a high-voltage N-channel enhancement mode power MOSFET manufactured by Advanced Power Electronics Corp. (APEC / A-POWER). It belongs to the AP65PN family of 650V switching MOSFETs, where the “1R4” designator reflects the device’s on-resistance class. Built on Advanced Power’s silicon process technology, the AP65PN1R4S is optimized for low on-resistance and fast switching, making it well suited to off-line and high-voltage power conversion designs.

Key Features

  • N-channel enhancement mode power MOSFET
  • Drain-source breakdown voltage (BVDSS): 650 V
  • Continuous drain current (ID): 7 A
  • On-resistance RDS(on): 1.45 Ω (max)
  • Fast switching characteristic for efficient high-frequency operation
  • Low on-resistance design for reduced conduction losses
  • RoHS-compliant
  • TO-220F full-pack (isolated tab) package

Applications

  • Off-line AC/DC switch-mode power supplies (SMPS)
  • Flyback and forward converter primary-side switches
  • LED lighting drivers
  • Adapters and chargers
  • High-voltage motor drive and PFC stages

Why Source AP65PN1R4S from Pacific Component Xchange

The AP65PN1R4S is a specialty high-voltage MOSFET with limited authorized-distributor stock, making it difficult to source through conventional channels. Pacific Component Xchange is an independent distributor specializing in hard-to-find and obsolete power-management and discrete semiconductors. We help engineers and procurement teams secure scarce parts like the AP65PN1R4S with a focus on authenticity, traceability, and quality. Every order is backed by our inspection and counterfeit-avoidance processes, and we ship globally to keep your production line moving. Request a quote (RFQ) for the AP65PN1R4S today and our sourcing team will respond with current availability and pricing.

Additional Information

Manufacturer

Advanced Power Electronics Corp. (APEC / A-POWER)

Component Type

N-Channel Enhancement Mode Power MOSFET

Drain-Source Voltage (BVDSS)

650 V

Continuous Drain Current (ID)

7 A

On-Resistance RDS(on)

1.45 Ω (max)

Gate-Source Voltage (VGS)

±30 V (max)

Gate Threshold Voltage (VGS(th))

5 V (max)

Polarity

N-Channel

Compliance

RoHS-compliant

Package

TO-220F (full-pack, isolated tab)

Part Status

Active

Availability

Available