AP65PN1R4I – N-Channel Power MOSFET – APEC
The AP65PN1R4I is a 650V N-channel enhancement-mode power MOSFET from APEC (Advanced Power Electronics Corp.) in a TO-220F full-pack package, rated for fast-switching applications. Available for RFQ at Pacific Component Xchange.
The AP65PN1R4I is a high-voltage N-channel enhancement-mode power MOSFET manufactured by APEC (Advanced Power Electronics Corp.). Built for fast-switching power-conversion circuits, it offers a 650V drain-source breakdown rating in the isolated TO-220F (full-pack) package, making it well suited to off-line and high-voltage switching designs where the tab must be electrically isolated from the heatsink.
Key Features
- N-channel enhancement-mode power MOSFET
- Drain-source breakdown voltage (BVDSS): 650 V
- Continuous drain current (ID): 5.2 A at TC = 25 °C
- Pulsed drain current (IDM): 20.8 A
- On-resistance RDS(ON): 1.45 Ω (max, VGS = 10 V)
- Gate-source voltage (VGS): ±30 V (max)
- Maximum power dissipation (PD): 32.9 W at TC = 25 °C
- Maximum operating junction temperature: 150 °C
- Typical total gate charge (Qg): 32 nC
- Fast switching characteristic with low gate charge
- Package: TO-220F (isolated full-pack)
The sister device AP65PN1R4P offers the same die in a standard non-isolated TO-220 package.
Applications
- Off-line AC/DC switch-mode power supplies (SMPS)
- DC/DC converters
- LED lighting and ballast drivers
- Motor control and inverter stages
- Battery chargers and adapters
Why Source AP65PN1R4I from Pacific Component Xchange
The AP65PN1R4I is a hard-to-find power MOSFET with limited authorized-distributor stock. As an independent distributor specializing in difficult-to-source and obsolete power-management semiconductors, Pacific Component Xchange helps engineers and buyers secure this part when mainstream channels come up empty. Every order is backed by our authenticity and quality-assurance process, and we ship worldwide to keep your production lines and repair programs running. Request a quote (RFQ) today and our sourcing team will confirm current availability, lead time, and pricing for the AP65PN1R4I.
Additional Information
| Manufacturer | Advanced Power Electronics Corp. (APEC) |
|---|---|
| Component Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (BVDSS) | 650 V |
| Continuous Drain Current (ID) | 5.2 A (TC = 25 °C) |
| Pulsed Drain Current (IDM) | 20.8 A |
| On-Resistance RDS(ON) max | 1.45 Ω (VGS = 10 V) |
| Gate-Source Voltage (VGS) max | ±30 V |
| Power Dissipation (PD) | 32.9 W (TC = 25 °C) |
| Total Gate Charge (Qg) | 32 nC (typ) |
| Max Junction Temperature | 150 °C |
| Package | TO-220F (isolated full-pack) |
| Part Status | Unknown / Request for Quote |
| Availability | Available |
