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AP4N2R6S – N-Channel Power MOSFET – APEC

The AP4N2R6S is a 40V, 2.6mΩ N-channel enhancement-mode power MOSFET from Advanced Power Electronics (APEC) in a surface-mount TO-263 package, built for ultra-low-loss, high-current switching.

Brand:APEC
SKU: AP4N2R6S Categories: ,
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The AP4N2R6S from Advanced Power Electronics Corp. (APEC) is an N-channel enhancement-mode power MOSFET designed for high-efficiency power conversion and load-switching applications. With a drain-source breakdown voltage of 40V and an ultra-low on-resistance of just 2.6mΩ, the AP4N2R6S minimizes conduction losses in demanding, high-current designs. It is supplied in the rugged surface-mount TO-263 (D2PAK) package and is RoHS-compliant.

Key Features

  • N-channel enhancement-mode power MOSFET
  • Drain-source voltage (VDS): 40V
  • Ultra-low on-resistance RDS(on): 2.6mΩ
  • Continuous drain current (ID): up to 150A
  • Gate-source voltage (VGS): 20V maximum
  • Total gate charge (Qg): approximately 87nC
  • Fast switching characteristics with simple gate-drive requirements
  • Surface-mount TO-263 (D2PAK) package
  • RoHS compliant

Applications

  • DC-DC converters and synchronous rectification
  • High-current load switching and power distribution
  • Motor control and drive circuits
  • Battery management and protection systems
  • Switching power supplies (SMPS)

Why Source AP4N2R6S from Pacific Component Xchange

The AP4N2R6S can be difficult to obtain through authorized distribution channels, with little to no franchised stock available. Pacific Component Xchange specializes in sourcing hard-to-find and end-of-availability power-management ICs and discrete power semiconductors like the AP4N2R6S. Our global supply network and rigorous authenticity and quality-verification processes help engineers and buyers secure genuine parts when standard channels come up empty. We offer worldwide shipping and responsive support for both prototype and production volumes.

Need the AP4N2R6S? Request a quote (RFQ) from Pacific Component Xchange today and our sourcing team will respond promptly with availability and pricing for your required quantity.

Additional Information

Manufacturer

Advanced Power Electronics Corp. (APEC)

Component Type

N-Channel Enhancement Mode Power MOSFET

Drain-Source Voltage (VDS)

40V

On-Resistance RDS(on)

2.6 mΩ

Continuous Drain Current (ID)

Up to 150A

Gate-Source Voltage (VGS)

20V

Gate Threshold Voltage (VGS(th))

5V (max)

Total Gate Charge (Qg)

~87 nC

Package

TO-263 (D2PAK)

Part Status

Active

Availability

Available