
AP0203GMT-HF-3 – N-Channel Power MOSFET – APEC
The AP0203GMT-HF-3 is a 30V N-channel enhancement-mode power MOSFET from Advanced Power Electronics Corp. (APEC) in a low-profile, SO-8-compatible PMPAK 5×6 package with backside heatsink, featuring 2.2mOhm RDS(on) for high-efficiency DC-DC conversion.
The AP0203GMT-HF-3 from Advanced Power Electronics Corp. (APEC) is a 30V N-channel enhancement-mode power MOSFET engineered for high-efficiency power conversion. It combines fast switching, a ruggedized device design, and ultra-low on-resistance in the proprietary PMPAK 5×6 package, whose footprint is compatible with the popular SO-8 while adding a backside heat sink and a lower package profile. The part is RoHS-compliant and halogen-free and is supplied on tape and reel (variant AP0203GMT-HF-3TR, 3000 pcs/reel).
Key Features
- N-channel enhancement-mode power MOSFET
- Drain-source breakdown voltage (BVDSS): 30V
- Static drain-source on-resistance RDS(on): 2.2mOhm max @ VGS=10V; 3.6mOhm max @ VGS=4.5V
- Gate-source voltage (VGS): +/-20V
- Continuous drain current ID: 155A (chip-limited) @ TC=25C; 38A @ TA=25C; pulsed IDM 300A
- Gate threshold voltage VGS(th): 1V to 3V
- Total power dissipation: 83.3W @ TC=25C (5W @ TA=25C)
- Total gate charge (Qg): 38nC typical (60nC max)
- Operating junction temperature: -55C to 150C
- Simple drive requirement; SO-8 compatible PMPAK 5×6 with heatsink
- RoHS-compliant, halogen-free
Applications
- DC-DC converters (buck/synchronous rectification)
- Voltage regulator modules (VRM) and point-of-load power supplies
- Motherboard and graphics card power stages
- Battery management and load switching
- High-current power management circuits
Why Source AP0203GMT-HF-3 from Pacific Component Xchange
The AP0203GMT-HF-3 is a hard-to-find part with little to no authorized-distributor availability. As an independent distributor specializing in power-management semiconductors, Pacific Component Xchange helps engineers and buyers secure obsolete, end-of-life, and allocation-constrained components like this APEC power MOSFET. Every order is backed by our authenticity and quality-assurance process to protect against counterfeit risk, and we ship globally to keep your production lines and field-service operations running. If you need this device, request a quote (RFQ) and our sourcing team will respond with current availability, lead time, and pricing.
Additional Information
| Manufacturer | Advanced Power Electronics Corp. (APEC) |
|---|---|
| Component Type | N-Channel Enhancement-Mode Power MOSFET |
| Channel | N-Channel |
| Drain-Source Voltage (BVDSS) | 30V |
| Gate-Source Voltage (VGS) | +/-20V |
| RDS(on) | 2.2mOhm max @ VGS=10V; 3.6mOhm max @ VGS=4.5V |
| Continuous Drain Current (ID) | 155A (chip-limited) @ TC=25C; 38A @ TA=25C |
| Pulsed Drain Current (IDM) | 300A |
| Gate Threshold Voltage VGS(th) | 1V to 3V |
| Total Gate Charge (Qg) | 38nC typ; 60nC max @ VGS=4.5V, ID=20A |
| Total Power Dissipation | 83.3W @ TC=25C; 5W @ TA=25C |
| Operating Junction Temperature | -55C to 150C |
| Package | PMPAK 5×6 (SO-8 compatible with heatsink) |
| Part Status | Unknown |
| Availability | Available |


