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AP0203GMT-HF-3 – N-Channel Power MOSFET – APEC

The AP0203GMT-HF-3 is a 30V N-channel enhancement-mode power MOSFET from Advanced Power Electronics Corp. (APEC) in a low-profile, SO-8-compatible PMPAK 5×6 package with backside heatsink, featuring 2.2mOhm RDS(on) for high-efficiency DC-DC conversion.

Brand:APEC
SKU: AP0203GMT-HF-3 Categories: ,
Please contact us or add to quote for current pricing and availability.

The AP0203GMT-HF-3 from Advanced Power Electronics Corp. (APEC) is a 30V N-channel enhancement-mode power MOSFET engineered for high-efficiency power conversion. It combines fast switching, a ruggedized device design, and ultra-low on-resistance in the proprietary PMPAK 5×6 package, whose footprint is compatible with the popular SO-8 while adding a backside heat sink and a lower package profile. The part is RoHS-compliant and halogen-free and is supplied on tape and reel (variant AP0203GMT-HF-3TR, 3000 pcs/reel).

Key Features

  • N-channel enhancement-mode power MOSFET
  • Drain-source breakdown voltage (BVDSS): 30V
  • Static drain-source on-resistance RDS(on): 2.2mOhm max @ VGS=10V; 3.6mOhm max @ VGS=4.5V
  • Gate-source voltage (VGS): +/-20V
  • Continuous drain current ID: 155A (chip-limited) @ TC=25C; 38A @ TA=25C; pulsed IDM 300A
  • Gate threshold voltage VGS(th): 1V to 3V
  • Total power dissipation: 83.3W @ TC=25C (5W @ TA=25C)
  • Total gate charge (Qg): 38nC typical (60nC max)
  • Operating junction temperature: -55C to 150C
  • Simple drive requirement; SO-8 compatible PMPAK 5×6 with heatsink
  • RoHS-compliant, halogen-free

Applications

  • DC-DC converters (buck/synchronous rectification)
  • Voltage regulator modules (VRM) and point-of-load power supplies
  • Motherboard and graphics card power stages
  • Battery management and load switching
  • High-current power management circuits

Why Source AP0203GMT-HF-3 from Pacific Component Xchange

The AP0203GMT-HF-3 is a hard-to-find part with little to no authorized-distributor availability. As an independent distributor specializing in power-management semiconductors, Pacific Component Xchange helps engineers and buyers secure obsolete, end-of-life, and allocation-constrained components like this APEC power MOSFET. Every order is backed by our authenticity and quality-assurance process to protect against counterfeit risk, and we ship globally to keep your production lines and field-service operations running. If you need this device, request a quote (RFQ) and our sourcing team will respond with current availability, lead time, and pricing.

Additional Information

Manufacturer

Advanced Power Electronics Corp. (APEC)

Component Type

N-Channel Enhancement-Mode Power MOSFET

Channel

N-Channel

Drain-Source Voltage (BVDSS)

30V

Gate-Source Voltage (VGS)

+/-20V

RDS(on)

2.2mOhm max @ VGS=10V; 3.6mOhm max @ VGS=4.5V

Continuous Drain Current (ID)

155A (chip-limited) @ TC=25C; 38A @ TA=25C

Pulsed Drain Current (IDM)

300A

Gate Threshold Voltage VGS(th)

1V to 3V

Total Gate Charge (Qg)

38nC typ; 60nC max @ VGS=4.5V, ID=20A

Total Power Dissipation

83.3W @ TC=25C; 5W @ TA=25C

Operating Junction Temperature

-55C to 150C

Package

PMPAK 5×6 (SO-8 compatible with heatsink)

Part Status

Unknown

Availability

Available