Integrated Circuits (ICs) > Linear ICs > Amplifiers - Op Amps, Buffer, Instrumentation > onsemi-NE5517DR2G
onsemi NE5517DR2G
| Part Number: | onsemi NE5517DR2G |
| Manufacturer: | onsemi |
| Part Type: | Integrated Circuits (ICs) > Linear ICs > Amplifiers - Op Amps, Buffer, Instrumentation > onsemi-NE5517DR2G |
| Qty Available: | |
| Description: | NE5517 Series 44 V 2 MHz Dual Operational Transconductance Amplifier - SOIC-16 |
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NE5517 Series 44 V 2 MHz Dual Operational Transconductance Amplifier - SOIC-16
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Number of Pins | 16 |
| Weight | 665.986997 mg |
| Common Mode Rejection Ratio | 80 dB |
| Gain Bandwidth Product | 2 MHz |
| Input Bias Current | 5 µA |
| Input Offset Voltage (Vos) | 5 mV |
| Max Dual Supply Voltage | 22 V |
| Max Input Voltage | -3 V |
| Max Operating Temperature | 70 °C |
| Max Power Dissipation | 1.125 W |
| Max Supply Voltage | 44 V |
| Min Dual Supply Voltage | 2 V |
| Min Operating Temperature | 0 °C |
| Min Supply Voltage | 4 V |
| Nominal Gain Bandwidth Product | 2 MHz |
| Number of Channels | 2 |
| Number of Circuits | 2 |
| Number of Elements | 2 |
| Operating Supply Current | 2.6 mA |
| Operating Supply Voltage | 30 V |
| Output Current | 350 µA |
| Output Current per Channel | 650 µA |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 1.125 W |
| Schedule B | 8542330000 |
| Slew Rate | 50 V/µs |
| Supply Type | Dual, Single |
| Height | 1.5 mm |
| Length | 10 mm |
| Width | 4 mm |
Images
Documentation for onsemi onsemi NE5517DR2G
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