Discrete Semiconductors > Transistors > BJTs > onsemi-MMBTA06LT1G
onsemi MMBTA06LT1G
| Part Number: | onsemi MMBTA06LT1G |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > onsemi-MMBTA06LT1G |
| Qty Available: | |
| Description: | Transistor, Bipolar, Si, NPN, Driver, VCEO 80VDC, IC 500mA, PD 225mW, SOT-23, VCBO 80VDC |
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Transistor, Bipolar, Si, NPN, Driver, VCEO 80VDC, IC 500mA, PD 225mW, SOT-23, VCBO 80VDC
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23-3 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Collector Base Voltage (VCBO) | 80 V |
| Collector Emitter Breakdown Voltage | 80 V |
| Collector Emitter Saturation Voltage | 250 mV |
| Collector Emitter Voltage (VCEO) | 80 V |
| Current Rating | 500 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 4 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 80 V |
| Max Collector Current | 500 mA |
| Max Frequency | 100 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 225 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Schedule B | 8541210080 |
| Transition Frequency | 100 MHz |
| Voltage Rating (DC) | 80 V |
| Height | 1.016 mm |
| Length | 3.0226 mm |
| Width | 1.397 mm |
Images
Documentation for onsemi onsemi MMBTA06LT1G
Alternate Descriptions
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