Discrete Semiconductors > Transistors > BJTs > onsemi-MJE802G

onsemi MJE802G

onsemi

Part Number:	onsemi MJE802G
Manufacturer:	onsemi
Part Type:	Discrete Semiconductors > Transistors > BJTs > onsemi-MJE802G
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Description:	4.0 A, 80 V NPN Darlington Bipolar Power Transistor

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04/21/2026 – There are 515 pieces pieces of Part Number onsemi MJE802G Available.

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4.0 A, 80 V NPN Darlington Bipolar Power Transistor

Specifications

TYPE	DESCRIPTION
Case/Package	TO-225
Number of Pins	3
Weight	4.535924 g
Collector Base Voltage (VCBO)	80 V
Collector Emitter Breakdown Voltage	80 V
Collector Emitter Saturation Voltage	2.5 V
Collector Emitter Voltage (VCEO)	80 V
Current Rating	4 A
Element Configuration	Single
Emitter Base Voltage (VEBO)	5 V
hFE Min	100
Max Collector Current	4 A
Max Operating Temperature	150 °C
Max Power Dissipation	40 W
Min Operating Temperature	-55 °C
Number of Elements	1
Packaging	Bulk
Polarity	NPN
Power Dissipation	40 W
Schedule B	8541290080
Voltage Rating (DC)	80 V
Height	11.04 mm
Length	7.74 mm
Width	2.66 mm

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Datasheet	View & Download onsemi-MJE802G Datasheet
Datasheet	View & Download onsemi-MJE802G Datasheet
Datasheet	View & Download onsemi-MJE802G Datasheet

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