Discrete Semiconductors > Transistors > MOSFETs > Vishay-SQD40P10-40L-GE3
Vishay SQD40P10-40L-GE3
| Part Number: | Vishay SQD40P10-40L-GE3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Vishay-SQD40P10-40L-GE3 |
| Qty Available: | |
| Description: | P-Channel 100-V (D-S), 175C Mosfet |Vishay SQD40P10-40L-GE3 |
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P-Channel 100-V (D-S), 175C Mosfet |Vishay SQD40P10-40L-GE3
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | -38 A |
| Drain to Source Breakdown Voltage | -100 V |
| Drain to Source Resistance | 33 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Fall Time | 15 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 136 W |
| Rise Time | 11 ns |
| Turn-Off Delay Time | 78 ns |
| Turn-On Delay Time | 11 ns |
| Height | 2.507 mm |
Documentation for Vishay Vishay SQD40P10-40L-GE3
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