Discrete Semiconductors > Transistors > MOSFETs > Vishay-SI7113DN-T1-GE3
Vishay SI7113DN-T1-GE3
| Part Number: | Vishay SI7113DN-T1-GE3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Vishay-SI7113DN-T1-GE3 |
| Qty Available: | |
| Description: | Trans Mosfet P-ch 100V 3.5A 8-PIN Powerpak 1212 Ep T/r / Mosfet P-ch 100V 13.2A 1212-8 |
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Trans Mosfet P-ch 100V 3.5A 8-PIN Powerpak 1212 Ep T/r / Mosfet P-ch 100V 13.2A 1212-8
Specifications
| TYPE | DESCRIPTION |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Continuous Drain Current (ID) | -3.5 A |
| Drain to Source Breakdown Voltage | -100 V |
| Drain to Source Resistance | 108 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.48 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 52 W |
| Min Operating Temperature | -50 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 3.7 W |
| Rds On Max | 134 mΩ |
| Resistance | 134 mΩ |
| Rise Time | 110 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 42 ns |
| Turn-On Delay Time | 11 ns |
| Height | 1.04 mm |
| Length | 3.3 mm |
| Width | 3.3 mm |
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Documentation for Vishay Vishay SI7113DN-T1-GE3
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