Discrete Semiconductors > Transistors > MOSFETs > Texas-Instruments-CSD17575Q3T
Texas Instruments CSD17575Q3T
| Part Number: | Texas Instruments CSD17575Q3T |
| Manufacturer: | Texas Instruments |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Texas-Instruments-CSD17575Q3T |
| Qty Available: | |
| Description: | 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150 |
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30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Specifications
| TYPE | DESCRIPTION |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 24.012046 mg |
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 2.6 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 3 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 4.42 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 108 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 2.8 W |
| Rds On Max | 2.3 mΩ |
| Rise Time | 10 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 1.4 V |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 4 ns |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Thickness | 1 mm |
| Width | 3.3 mm |
Images
Documentation for Texas Instruments Texas Instruments CSD17575Q3T
Alternate Descriptions
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