Discrete Semiconductors > Transistors > MOSFETs > TN0110N3-G
TN0110N3-G
| Part Number: | TN0110N3-G |
| Manufacturer: | Microchip |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > TN0110N3-G |
| Qty Available: | |
| Description: | TN0110 Series 100 V 3 Ohm N-Channel Enhancement-Mode Vertical DMOS FET - TO-92 |
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TN0110 Series 100 V 3 Ohm N-Channel Enhancement-Mode Vertical DMOS FET - TO-92
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-92 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 453.59237 mg |
| Continuous Drain Current (ID) | 350 mA |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 3 Ω |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 3 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 60 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 1 W |
| Rds On Max | 3 Ω |
| Rise Time | 3 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 6 ns |
| Turn-On Delay Time | 2 ns |
| Height | 5.33 mm |
| Length | 5.21 mm |
| Width | 4.19 mm |
Images
Documentation for Microchip TN0110N3-G
| Datasheet | View & Download TN0110N3-G Datasheet |
| Datasheet | View & Download TN0110N3-G Datasheet |
| Datasheet | View & Download TN0110N3-G Datasheet |
| Datasheet | View & Download TN0110N3-G Datasheet |
| Datasheet | View & Download TN0110N3-G Datasheet |
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