Discrete Semiconductors > Transistors > IGBTs > STMicroelectronics-STGF10NB60SD
STMicroelectronics STGF10NB60SD
| Part Number: | STMicroelectronics STGF10NB60SD |
| Manufacturer: | STMicroelectronics |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > STMicroelectronics-STGF10NB60SD |
| Qty Available: | |
| Description: | Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220FP Tube |
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Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220FP Tube
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Collector Base Breakdown Voltage (VCES) | 600 V |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.35 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 23 A |
| Continuous Drain Current (ID) | 20 A |
| Current Rating | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Forward Current | 20 A |
| Forward Voltage | 1.9 V |
| Max Breakdown Voltage | 600 V |
| Max Collector Current | 23 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 25 W |
| Min Operating Temperature | -55 °C |
| Power Dissipation | 25 W |
| Reverse Recovery Time | 37 ns |
| Rise Time | 460 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 1.2 µs |
| Turn-On Delay Time | 460 ns |
| Voltage Rating (DC) | 600 V |
| Height | 20 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
Images
Documentation for STMicroelectronics STMicroelectronics STGF10NB60SD
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