Discrete Semiconductors > Transistors > IGBTs > STMicroelectronics-STGD5NB120SZT4
STMicroelectronics STGD5NB120SZT4
| Part Number: | STMicroelectronics STGD5NB120SZT4 |
| Manufacturer: | STMicroelectronics |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > STMicroelectronics-STGD5NB120SZT4 |
| Qty Available: | |
| Description: | Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R |
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Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
Specifications
| TYPE | DESCRIPTION |
| Case/Package | DPAK |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 3.949996 g |
| Collector Base Breakdown Voltage (VCES) | 1.2 kV |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 5 A |
| Current Rating | 5 A |
| Element Configuration | Single |
| Max Breakdown Voltage | 1.2 kV |
| Max Collector Current | 10 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 75 W |
| Min Operating Temperature | -55 °C |
| Packaging | Digi-Reel® |
| Power Dissipation | 55 W |
| Rise Time | 170 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 12.1 µs |
| Turn-On Delay Time | 690 ns |
| Voltage Rating (DC) | 1.2 kV |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
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Documentation for STMicroelectronics STMicroelectronics STGD5NB120SZT4
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