Discrete Semiconductors > Transistors > MOSFETs > SPW47N60C3FKSA1

SPW47N60C3FKSA1

Infineon

Part Number:	SPW47N60C3FKSA1
Manufacturer:	Infineon
Part Type:	Discrete Semiconductors > Transistors > MOSFETs > SPW47N60C3FKSA1
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Description:	Single N-Channel 650 V 70 mOhm 252 nC CoolMOS Power Mosfet - TO-247-3

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Single N-Channel 650 V 70 mOhm 252 nC CoolMOS Power Mosfet - TO-247-3

Specifications

TYPE	DESCRIPTION
Case/Package	TO-247
Mount	Through Hole
Number of Pins	3
Continuous Drain Current (ID)	47 A
Current Rating	47 A
Drain to Source Resistance	70 mΩ
Drain to Source Voltage (Vdss)	600 V
Fall Time	8 ns
Gate to Source Voltage (Vgs)	20 V
Max Dual Supply Voltage	600 V
Max Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Number of Elements	1
On-State Resistance	70 mΩ
Package Quantity	240
Power Dissipation	415 W
Rise Time	27 ns
Schedule B	8541290080
Turn-Off Delay Time	111 ns
Turn-On Delay Time	18 ns
Voltage Rating (DC)	650 V

Images

Documentation for Infineon SPW47N60C3FKSA1

Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet
Datasheet	View & Download SPW47N60C3FKSA1 Datasheet

Alternate Descriptions

Descriptions of Infineon SPW47N60C3FKSA1 provided by its distributors.
Single N-Channel 650 V 70 mOhm 252 nC CoolMOS Power Mosfet - TO-247-3
INFINEON THT MOSFET NFET 650V 47A 70mΩ 150°C TO-247 SPW47N60C3
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 650V, 47A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon SPW47N60C3FKSA1.
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 47 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 111 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 415
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:415W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:47A; Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:415W; Power Dissipation Pd:415W; Power Dissipation Ptot Max:415W; Pulse Current Idm:141A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

SPW47N60C3FKSA1

Infineon

Specifications

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Documentation for Infineon SPW47N60C3FKSA1

Alternate Descriptions

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