Discrete Semiconductors > Transistors > MOSFETs > SI9407AEY-T1-E3
SI9407AEY-T1-E3
| Part Number: | SI9407AEY-T1-E3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI9407AEY-T1-E3 |
| Qty Available: | |
| Description: | Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET |
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Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SO |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 506.605978 mg |
| Continuous Drain Current (ID) | 3.5 A |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 120 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Dual Supply Voltage | -60 V |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 3 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 3 W |
| Resistance | 120 mΩ |
| Rise Time | 10 ns |
| Termination | SMD/SMT |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 8 ns |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
Images
Documentation for Vishay SI9407AEY-T1-E3
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
| Datasheet | View & Download SI9407AEY-T1-E3 Datasheet |
Alternate Descriptions
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