Discrete Semiconductors > Transistors > MOSFETs > SI8425DB-T1-E1
SI8425DB-T1-E1
| Part Number: | SI8425DB-T1-E1 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI8425DB-T1-E1 |
| Qty Available: | |
| Description: | Single P-Channel 20 V 23 mO 36 nC Surface Mount Power Mosfet - MICRO FOOT |
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Single P-Channel 20 V 23 mO 36 nC Surface Mount Power Mosfet - MICRO FOOT
Specifications
| TYPE | DESCRIPTION |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Continuous Drain Current (ID) | 9.3 A |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 23 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Single |
| Fall Time | 200 ns |
| Gate to Source Voltage (Vgs) | 10 V |
| Input Capacitance | 2.8 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.1 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.7 W |
| Rds On Max | 23 mΩ |
| Resistance | 23 mΩ |
| Rise Time | 50 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 600 ns |
| Turn-On Delay Time | 50 ns |
Images
Documentation for Vishay SI8425DB-T1-E1
| Datasheet | View & Download SI8425DB-T1-E1 Datasheet |
| Datasheet | View & Download SI8425DB-T1-E1 Datasheet |
Alternate Descriptions
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