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           Discrete Semiconductors > Transistors > MOSFETs > SI7958DP-T1-E3

SI7958DP-T1-E3

Part Number: SI7958DP-T1-E3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI7958DP-T1-E3
Qty Available:
Description: Trans MOSFET N-CH 40V 7.2A 8-Pin PowerPAK SO T/R

04/24/2026 – There are 515 pieces pieces of Part Number SI7958DP-T1-E3 Available.

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Trans MOSFET N-CH 40V 7.2A 8-Pin PowerPAK SO T/R

Specifications

TYPE DESCRIPTION
Case/Package SOIC
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 7.2 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 16.5 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Dual
Fall Time 17 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Max Power Dissipation 1.4 W
Min Operating Temperature -55 °C
Nominal Vgs 3 V
Number of Channels 2
Number of Elements 2
Power Dissipation 1.4 W
Rds On Max 16.5 mΩ
Resistance 16.5 mΩ
Rise Time 17 ns
Threshold Voltage 3 V
Turn-Off Delay Time 66 ns
Turn-On Delay Time 17 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm
Case/Package SOIC
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 7.2 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 16.5 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Dual
Fall Time 17 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Max Power Dissipation 1.4 W
Min Operating Temperature -55 °C
Nominal Vgs 3 V
Number of Channels 2
Number of Elements 2
Power Dissipation 1.4 W
Rds On Max 16.5 mΩ
Resistance 16.5 mΩ
Rise Time 17 ns
Threshold Voltage 3 V
Turn-Off Delay Time 66 ns
Turn-On Delay Time 17 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm
Case/Package SOIC
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 7.2 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 16.5 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Dual
Fall Time 17 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Max Power Dissipation 1.4 W
Min Operating Temperature -55 °C
Nominal Vgs 3 V
Number of Channels 2
Number of Elements 2
Power Dissipation 1.4 W
Rds On Max 16.5 mΩ
Resistance 16.5 mΩ
Rise Time 17 ns
Threshold Voltage 3 V
Turn-Off Delay Time 66 ns
Turn-On Delay Time 17 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm

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