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           Discrete Semiconductors > Transistors > MOSFETs > SI7850DP-T1-E3

SI7850DP-T1-E3

Part Number: SI7850DP-T1-E3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI7850DP-T1-E3
Qty Available:
Description: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

04/24/2026 – There are 515 pieces pieces of Part Number SI7850DP-T1-E3 Available.

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Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

Specifications

TYPE DESCRIPTION
Case/Package SOIC
Contact Plating Tin
Mount Surface Mount
Number of Pins 8
Continuous Drain Current (ID) 6.2 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 18 mΩ
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage 60 V
Element Configuration Single
Fall Time 10 ns
Gate to Source Voltage (Vgs) 20 V
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.8 W
Manufacturer Package Identifier S17-0173-Single
Min Operating Temperature -55 °C
Nominal Vgs 3 V
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 1.8 W
Rds On Max 22 mΩ
Resistance 22 mΩ
Rise Time 10 ns
Schedule B 8541290080
Termination SMD/SMT
Threshold Voltage 3 V
Turn-Off Delay Time 25 ns
Turn-On Delay Time 10 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm

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