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           Discrete Semiconductors > Transistors > MOSFETs > SI7461DP-T1-GE3

SI7461DP-T1-GE3

Part Number: SI7461DP-T1-GE3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI7461DP-T1-GE3
Qty Available:
Description: Single N-Channel 60 V 0.00625 Ohm Surface Mount Power MosFet - POWERPAK-SO-8

04/24/2026 – There are 515 pieces pieces of Part Number SI7461DP-T1-GE3 Available.

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Single N-Channel 60 V 0.00625 Ohm Surface Mount Power MosFet - POWERPAK-SO-8

Specifications

TYPE DESCRIPTION
Case/Package SOIC
Contact Plating Tin
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 8.6 A
Drain to Source Resistance 11.5 mΩ
Drain to Source Voltage (Vdss) -60 V
Element Configuration Single
Fall Time 20 ns
Gate to Source Voltage (Vgs) 20 V
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.9 W
Manufacturer Package Identifier S17-0173-Single
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 1.9 W
Rds On Max 14.5 mΩ
Resistance 6.25 mΩ
Rise Time 20 ns
Schedule B 8541290080
Threshold Voltage -3 V
Turn-Off Delay Time 205 ns
Turn-On Delay Time 20 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm
Case/Package SOIC
Contact Plating Tin
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 8.6 A
Drain to Source Resistance 11.5 mΩ
Drain to Source Voltage (Vdss) -60 V
Element Configuration Single
Fall Time 20 ns
Gate to Source Voltage (Vgs) 20 V
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.9 W
Manufacturer Package Identifier S17-0173-Single
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 1.9 W
Rds On Max 14.5 mΩ
Resistance 6.25 mΩ
Rise Time 20 ns
Schedule B 8541290080
Threshold Voltage -3 V
Turn-Off Delay Time 205 ns
Turn-On Delay Time 20 ns
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm

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