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           Discrete Semiconductors > Transistors > MOSFETs > SI7450DP-T1-E3

SI7450DP-T1-E3

Part Number: SI7450DP-T1-E3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI7450DP-T1-E3
Qty Available:
Description: SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC

04/24/2026 – There are 515 pieces pieces of Part Number SI7450DP-T1-E3 Available.

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SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC

Specifications

TYPE DESCRIPTION
Contact Plating Tin
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 3.2 A
Current Rating 5.3 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 80 mΩ
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 25 ns
Gate to Source Voltage (Vgs) 20 V
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 5.2 W
Manufacturer Package Identifier S17-0173_SINGLE
Min Operating Temperature -55 °C
Nominal Vgs 2 V
Number of Channels 1
Number of Elements 1
Power Dissipation 1.9 W
Rds On Max 80 mΩ
Resistance 80 mΩ
Rise Time 20 ns
Schedule B 8541290080
Threshold Voltage 2 V
Turn-Off Delay Time 32 ns
Turn-On Delay Time 14 ns
Voltage Rating (DC) 20 V
Height 1.04 mm
Length 4.9 mm
Width 5.89 mm

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