Discrete Semiconductors > Transistors > MOSFETs > SI6463DQ-T1-E3
SI6463DQ-T1-E3
| Part Number: | SI6463DQ-T1-E3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI6463DQ-T1-E3 |
| Qty Available: | |
| Description: | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,... |
PCX has Vishay Discrete Semiconductors > Transistors > MOSFETs > SI6463DQ-T1-E3 Electronic Components for Sale.
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Power Field-Effect Transistor, 6.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TSSOP |
| Weight | 157.991892 mg |
| Continuous Drain Current (ID) | 6.5 A |
| Drain to Source Resistance | 20 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Single |
| Fall Time | 30 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.5 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 1.3 W |
| Rise Time | 30 ns |
| Turn-Off Delay Time | 110 ns |
| Turn-On Delay Time | 30 ns |
| Height | 1 mm |
| Length | 3 mm |
| Width | 4.4 mm |
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