Discrete Semiconductors > Transistors > MOSFETs > SI4840BDY-T1-E3
SI4840BDY-T1-E3
| Part Number: | SI4840BDY-T1-E3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI4840BDY-T1-E3 |
| Qty Available: | |
| Description: | Single N-Channel 40 V 9 mOhm Surface Mount Power Mosfet - SOIC-8 |
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Single N-Channel 40 V 9 mOhm Surface Mount Power Mosfet - SOIC-8
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 186.993455 mg |
| Continuous Drain Current (ID) | 19 A |
| Current | 19 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 7.4 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 6 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5 W |
| Rds On Max | 9 mΩ |
| Resistance | 9 MΩ |
| Rise Time | 15 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 1 V |
| Turn-Off Delay Time | 30 ns |
| Turn-On Delay Time | 10 ns |
| Voltage | 40 V |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
Images
Documentation for Vishay SI4840BDY-T1-E3
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
| Datasheet | View & Download SI4840BDY-T1-E3 Datasheet |
Alternate Descriptions
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