Discrete Semiconductors > Transistors > MOSFETs > SI4410DY-T1-A-E3
SI4410DY-T1-A-E3
| Part Number: | SI4410DY-T1-A-E3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI4410DY-T1-A-E3 |
| Qty Available: | |
| Description: | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SO |
| Number of Pins | 8 |
| Weight | 186.993455 mg |
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 13.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 2.5 W |
| Rise Time | 9 ns |
| Turn-Off Delay Time | 70 ns |
| Turn-On Delay Time | 19 ns |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
Images
Documentation for Vishay SI4410DY-T1-A-E3
| Datasheet | View & Download SI4410DY-T1-A-E3 Datasheet |
| Datasheet | View & Download SI4410DY-T1-A-E3 Datasheet |
| Datasheet | View & Download SI4410DY-T1-A-E3 Datasheet |
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