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           Discrete Semiconductors > Transistors > MOSFETs > SI4214DDY-T1-GE3

SI4214DDY-T1-GE3

Part Number: SI4214DDY-T1-GE3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI4214DDY-T1-GE3
Qty Available:
Description: Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8

04/24/2026 – There are 515 pieces pieces of Part Number SI4214DDY-T1-GE3 Available.

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Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8

Specifications

TYPE DESCRIPTION
Case/Package SOIC
Mount Surface Mount
Number of Pins 8
Weight 506.605978 mg
Continuous Drain Current (ID) 8.5 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 16 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Dual
Fall Time 12 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 660 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 3.1 W
Min Operating Temperature -55 °C
Number of Channels 2
Number of Elements 2
Power Dissipation 2 W
Rds On Max 19.5 mΩ
Resistance 19.5 mΩ
Rise Time 45 ns
Schedule B 8541290080
Threshold Voltage 2.5 V
Turn-Off Delay Time 15 ns
Turn-On Delay Time 7 ns
Height 1.5 mm
Length 5 mm
Width 4 mm

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