Discrete Semiconductors > Transistors > MOSFETs > SI2319CDS-T1-GE3
SI2319CDS-T1-GE3
| Part Number: | SI2319CDS-T1-GE3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI2319CDS-T1-GE3 |
| Qty Available: | |
| Description: | Transistor: P-MOSFET; unipolar; -40V; -4.4A; 0.077ohm; 2.5W; -55+150 deg.C; SMD; SOT23 |
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Transistor: P-MOSFET; unipolar; -40V; -4.4A; 0.077ohm; 2.5W; -55+150 deg.C; SMD; SOT23
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 1.437803 g |
| Continuous Drain Current (ID) | -4.4 A |
| Drain to Source Breakdown Voltage | -40 V |
| Drain to Source Resistance | 64 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 595 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.25 W |
| Rds On Max | 77 mΩ |
| Resistance | 77 mΩ |
| Schedule B | 8541290080 |
| Threshold Voltage | -2.5 V |
| Turn-Off Delay Time | 18 ns |
| Turn-On Delay Time | 40 ns |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Width | 1.4 mm |
Images
Documentation for Vishay SI2319CDS-T1-GE3
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
| Datasheet | View & Download SI2319CDS-T1-GE3 Datasheet |
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