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           Discrete Semiconductors > Transistors > MOSFETs > SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

Part Number: SI2308BDS-T1-GE3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI2308BDS-T1-GE3
Qty Available:
Description: VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V

04/24/2026 – There are 515 pieces pieces of Part Number SI2308BDS-T1-GE3 Available.

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VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V

Specifications

TYPE DESCRIPTION
Case/Package SOT-23-3
Contact Plating Tin
Mount Surface Mount
Number of Pins 3
Weight 1.437803 g
Continuous Drain Current (ID) 1.9 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 156 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 16 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 190 pF
Max Operating Temperature 150 °C
Max Power Dissipation 1.09 W
Min Operating Temperature -55 °C
Nominal Vgs 3 V
Number of Channels 1
Number of Elements 1
Packaging Cut Tape (CT)
Power Dissipation 1.09 W
Rds On Max 156 mΩ
Resistance 156 mΩ
Rise Time 16 ns
Schedule B 8541290080
Threshold Voltage 3 V
Turn-Off Delay Time 11 ns
Turn-On Delay Time 15 ns
Height 1.02 mm
Length 3.04 mm
Width 1.4 mm

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