Discrete Semiconductors > Transistors > MOSFETs > SI2307DS-T1-E3
SI2307DS-T1-E3
| Part Number: | SI2307DS-T1-E3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI2307DS-T1-E3 |
| Qty Available: | |
| Description: | Trans Mosfet P-ch 30V 3A 3-PIN TO-236 T/r |
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Trans Mosfet P-ch 30V 3A 3-PIN TO-236 T/r
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Weight | 1.437803 g |
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Resistance | 80 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.25 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 1.25 W |
| Rise Time | 9 ns |
| Turn-Off Delay Time | 27 ns |
| Turn-On Delay Time | 10 ns |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Width | 1.4 mm |
Images
Documentation for Vishay SI2307DS-T1-E3
| Datasheet | View & Download SI2307DS-T1-E3 Datasheet |
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