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           Discrete Semiconductors > Transistors > MOSFETs > SI1912EDH-T1-E3

SI1912EDH-T1-E3

Part Number: SI1912EDH-T1-E3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI1912EDH-T1-E3
Qty Available:
Description: Trans Mosfet N-ch 20V 1.13A 6-PIN SC-70 T/r / Mosfet 2N-CH 20V 1.13A SC70-6

04/24/2026 – There are 515 pieces pieces of Part Number SI1912EDH-T1-E3 Available.

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Trans Mosfet N-ch 20V 1.13A 6-PIN SC-70 T/r / Mosfet 2N-CH 20V 1.13A SC70-6

Specifications

TYPE DESCRIPTION
Case/Package SOT-363
Mount Surface Mount
Number of Pins 6
Continuous Drain Current (ID) 1.28 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 280 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Dual
Fall Time 85 ns
Gate to Source Voltage (Vgs) 12 V
Max Operating Temperature 150 °C
Max Power Dissipation 570 mW
Min Operating Temperature -55 °C
Nominal Vgs 450 mV
Number of Elements 2
Packaging Cut Tape
Power Dissipation 570 mW
Rds On Max 280 mΩ
Resistance 280 mΩ
Rise Time 85 ns
Threshold Voltage 450 mV
Turn-Off Delay Time 350 ns
Turn-On Delay Time 45 ns
Height 900 µm
Length 2.05 mm
Width 1.25 mm
Case/Package SOT-363
Mount Surface Mount
Number of Pins 6
Continuous Drain Current (ID) 1.28 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 280 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Dual
Fall Time 85 ns
Gate to Source Voltage (Vgs) 12 V
Max Operating Temperature 150 °C
Max Power Dissipation 570 mW
Min Operating Temperature -55 °C
Nominal Vgs 450 mV
Number of Elements 2
Packaging Cut Tape
Power Dissipation 570 mW
Rds On Max 280 mΩ
Resistance 280 mΩ
Rise Time 85 ns
Threshold Voltage 450 mV
Turn-Off Delay Time 350 ns
Turn-On Delay Time 45 ns
Height 900 µm
Length 2.05 mm
Width 1.25 mm

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