Discrete Semiconductors > Transistors > MOSFETs > SI1553CDL-T1-GE3
SI1553CDL-T1-GE3
| Part Number: | SI1553CDL-T1-GE3 |
| Manufacturer: | Vishay |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > SI1553CDL-T1-GE3 |
| Qty Available: | |
| Description: | SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363 |
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SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Weight | 28.009329 mg |
| Continuous Drain Current (ID) | 500 mA |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 850 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Input Capacitance | 38 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 340 mW |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 290 mW |
| Rds On Max | 390 mΩ |
| Resistance | 850 mΩ |
| Rise Time | 15 ns |
| Schedule B | 8541210080 |
| Turn-Off Delay Time | 12 ns |
| Turn-On Delay Time | 15 ns |
| Height | 1.1 mm |
Images
Documentation for Vishay SI1553CDL-T1-GE3
| Datasheet | View & Download SI1553CDL-T1-GE3 Datasheet |
| Datasheet | View & Download SI1553CDL-T1-GE3 Datasheet |
| Datasheet | View & Download SI1553CDL-T1-GE3 Datasheet |
| Datasheet | View & Download SI1553CDL-T1-GE3 Datasheet |
| Datasheet | View & Download SI1553CDL-T1-GE3 Datasheet |
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