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           Discrete Semiconductors > Transistors > MOSFETs > SI1012R-T1-GE3

SI1012R-T1-GE3

Part Number: SI1012R-T1-GE3
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > SI1012R-T1-GE3
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Description: Single N-Channel 20 V 0.7 Ohms Surface Mount Power Mosfet - SC-75A

04/24/2026 – There are 515 pieces pieces of Part Number SI1012R-T1-GE3 Available.

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Single N-Channel 20 V 0.7 Ohms Surface Mount Power Mosfet - SC-75A

Specifications

TYPE DESCRIPTION
Case/Package SOT-416
Mount Surface Mount
Number of Pins 3
Continuous Drain Current (ID) 500 mA
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 410 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Single
Fall Time 5 ns
Gate to Source Voltage (Vgs) 6 V
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 150 mW
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Power Dissipation 150 mW
Rds On Max 700 mΩ
Resistance 700 MΩ
Rise Time 5 ns
Schedule B 8541210080
Threshold Voltage 800 mV
Turn-Off Delay Time 25 ns
Turn-On Delay Time 5 ns
Height 700 µm
Length 1.58 mm
Width 760 µm

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