Discrete Semiconductors > Transistors > MOSFETs > Renesas-NP100P06PDG-E1-AY
Renesas NP100P06PDG-E1-AY
| Part Number: | Renesas NP100P06PDG-E1-AY |
| Manufacturer: | Renesas |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Renesas-NP100P06PDG-E1-AY |
| Qty Available: | |
| Description: | Trans MOSFET P-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK T/R |
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Trans MOSFET P-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-263 |
| Mount | Surface Mount |
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Resistance | 7.8 MΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Fall Time | 100 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 15 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 1.8 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 1.8 W |
| Rds On Max | 6 mΩ |
| Rise Time | 35 ns |
| Turn-Off Delay Time | 275 ns |
| Turn-On Delay Time | 28 ns |
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Documentation for Renesas Renesas NP100P06PDG-E1-AY
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