QRD1114

The product is called QRD1114. It is a 30 V 50 mA Phototransistor Reflective Object Sensor.

The QRD1114 has the following technical specifications:- Collector Emitter Breakdown Voltage: 30 V- Collector Emitter Voltage (VCEO): 30 V- Fall Time: 50 µs- Forward Current: 50 mA- Forward Voltage: 1.7 V- Input Current: 20 mA- Max Collector Current: 1 mA- Max Operating Temperature: 85 °C- Max Power Dissipation: 100 mW- Min Operating Temperature: -40 °C- Number of Channels: 1- Number of Elements: 1- Operating Supply Voltage: 1.7 V- Output Type: Phototransistor- Output Voltage: 30 V- Packaging: Bulk- Power Dissipation: 100 mW- Response Time: 50 µs- Reverse Breakdown Voltage: 5 V- Reverse Voltage (DC): 5 V- Rise Time: 10 µs- Sensing Distance: 1.27 mm- Wavelength: 940 nm- Dimensions: Height: 4.65 mm, Length: 6.1 mm, Width: 4.39 mm

Yes, the QRD1114 is RoHS compliant.

You can find datasheets and manufacturer documentation for the QRD1114 from onsemi and Future Electronics.