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           Discrete Semiconductors > Transistors > MOSFETs > PD55003-E

PD55003-E

Part Number: PD55003-E
Manufacturer: STMicroelectronics
Part Type: Discrete Semiconductors > Transistors > MOSFETs > PD55003-E
Qty Available:
Description: PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF

04/26/2026 – There are 515 pieces pieces of Part Number PD55003-E Available.

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PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF

Specifications

TYPE DESCRIPTION
Mount Surface Mount
Number of Pins 3
Continuous Drain Current (ID) 2.5 A
Current Rating 2.5 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Voltage (Vdss) 40 V
Element Configuration Single
Frequency 500 MHz
Gain 17 dB
Gate to Source Voltage (Vgs) 20 V
Max Frequency 1 GHz
Max Operating Temperature 165 °C
Max Output Power 3 W
Max Power Dissipation 31.7 W
Min Operating Temperature -65 °C
Number of Elements 1
Operating Supply Voltage 12.5 V
Output Power 3 W
Power Dissipation 31.7 W
Power Gain 14 dB
Schedule B 8541290080
Test Current 50 mA
Test Voltage 12.5 V
Voltage Rating 40 V
Voltage Rating (DC) 40 V
Height 3.5 mm
Length 7.5 mm
Width 9.4 mm
Mount Surface Mount
Number of Pins 3
Continuous Drain Current (ID) 2.5 A
Current Rating 2.5 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Voltage (Vdss) 40 V
Element Configuration Single
Frequency 500 MHz
Gain 17 dB
Gate to Source Voltage (Vgs) 20 V
Max Frequency 1 GHz
Max Operating Temperature 165 °C
Max Output Power 3 W
Max Power Dissipation 31.7 W
Min Operating Temperature -65 °C
Number of Elements 1
Operating Supply Voltage 12.5 V
Output Power 3 W
Power Dissipation 31.7 W
Power Gain 14 dB
Schedule B 8541290080
Test Current 50 mA
Test Voltage 12.5 V
Voltage Rating 40 V
Voltage Rating (DC) 40 V
Height 3.5 mm
Length 7.5 mm
Width 9.4 mm

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