Discrete Semiconductors > Transistors > BJTs > MMBT3904LT1G
MMBT3904LT1G
| Part Number: | MMBT3904LT1G |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > MMBT3904LT1G |
| Qty Available: | |
| Description: | Bipolar junction transistor, NPN, 200 mA, 40 V, SOT-23, MMBT3904LT1G |
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Bipolar junction transistor, NPN, 200 mA, 40 V, SOT-23, MMBT3904LT1G
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23-3 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Collector Base Voltage (VCBO) | 60 V |
| Collector Emitter Breakdown Voltage | 40 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 40 V |
| Current Rating | 200 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 6 V |
| Frequency | 300 MHz |
| Gain Bandwidth Product | 300 MHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 40 V |
| Max Collector Current | 200 mA |
| Max Frequency | 300 MHz |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Schedule B | 8541210080 |
| Transition Frequency | 300 MHz |
| Type | General Purpose |
| Voltage Rating (DC) | 40 V |
| Height | 940 µm |
| Length | 2.9 mm |
| Width | 1.3 mm |
Images
Documentation for onsemi MMBT3904LT1G
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Technical Drawing | View & Download MMBT3904LT1G Technical Drawing |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
| Datasheet | View & Download MMBT3904LT1G Datasheet |
Alternate Descriptions
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