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           Discrete Semiconductors > Transistors > BJTs > MMBT2222A-TP

MMBT2222A-TP

Part Number: MMBT2222A-TP
Manufacturer: MCC
Part Type: Discrete Semiconductors > Transistors > BJTs > MMBT2222A-TP
Qty Available:
Description: 40V 350mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

04/21/2026 – There are 515 pieces pieces of Part Number MMBT2222A-TP Available.

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40V 350mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

Specifications

TYPE DESCRIPTION
Case/Package SOT-23
Mount Surface Mount
Number of Pins 3
Collector Base Voltage (VCBO) 75 V
Collector Emitter Breakdown Voltage 40 V
Collector Emitter Saturation Voltage 1 V
Collector Emitter Voltage (VCEO) 40 V
Current Rating 600 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6 V
Frequency 300 MHz
Gain Bandwidth Product 300 MHz
hFE Min 35
Max Breakdown Voltage 40 V
Max Collector Current 600 mA
Max Frequency 300 MHz
Max Operating Temperature 150 °C
Max Power Dissipation 350 mW
Min Operating Temperature -55 °C
Number of Elements 1
Packaging Cut Tape
Polarity NPN
Power Dissipation 350 mW
Schedule B 8541210080
Transition Frequency 300 MHz
Voltage Rating (DC) 40 V
Height 1.12 mm
Length 3.04 mm
Width 1.4 mm
Case/Package SOT-23
Mount Surface Mount
Number of Pins 3
Collector Base Voltage (VCBO) 75 V
Collector Emitter Breakdown Voltage 40 V
Collector Emitter Saturation Voltage 1 V
Collector Emitter Voltage (VCEO) 40 V
Current Rating 600 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6 V
Frequency 300 MHz
Gain Bandwidth Product 300 MHz
hFE Min 35
Max Breakdown Voltage 40 V
Max Collector Current 600 mA
Max Frequency 300 MHz
Max Operating Temperature 150 °C
Max Power Dissipation 350 mW
Min Operating Temperature -55 °C
Number of Elements 1
Packaging Cut Tape
Polarity NPN
Power Dissipation 350 mW
Schedule B 8541210080
Transition Frequency 300 MHz
Voltage Rating (DC) 40 V
Height 1.12 mm
Length 3.04 mm
Width 1.4 mm

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