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           Discrete Semiconductors > Transistors > BJTs > JANTXV2N2484

JANTXV2N2484

Part Number: JANTXV2N2484
Manufacturer: Microchip
Part Type: Discrete Semiconductors > Transistors > BJTs > JANTXV2N2484
Qty Available:
Description: 2N2484 Series 60 V 50 mA 360 mW Through Hole NPN Silicon Transistor - TO-18

04/22/2026 – There are 515 pieces pieces of Part Number JANTXV2N2484 Available.

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2N2484 Series 60 V 50 mA 360 mW Through Hole NPN Silicon Transistor - TO-18

Specifications

TYPE DESCRIPTION
Case/Package TO-18
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 60 V
Collector Emitter Voltage (VCEO) 60 V
Emitter Base Voltage (VEBO) 6 V
Max Collector Current 50 mA
Max Operating Temperature 200 °C
Max Power Dissipation 360 mW
Min Operating Temperature -65 °C
Number of Elements 1
Packaging Bulk
Polarity NPN
Power Dissipation 360 mW
Schedule B 8541210080
Case/Package TO-18
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 60 V
Collector Emitter Voltage (VCEO) 60 V
Emitter Base Voltage (VEBO) 6 V
Max Collector Current 50 mA
Max Operating Temperature 200 °C
Max Power Dissipation 360 mW
Min Operating Temperature -65 °C
Number of Elements 1
Packaging Bulk
Polarity NPN
Power Dissipation 360 mW
Schedule B 8541210080
Case/Package TO-18
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 60 V
Collector Emitter Voltage (VCEO) 60 V
Emitter Base Voltage (VEBO) 6 V
Max Collector Current 50 mA
Max Operating Temperature 200 °C
Max Power Dissipation 360 mW
Min Operating Temperature -65 °C
Number of Elements 1
Packaging Bulk
Polarity NPN
Power Dissipation 360 mW
Schedule B 8541210080

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